Dynamic test systems: Features
The test system tests DUTs for changes in properties because of gate activation in the application. Over the lifetime of the device those effects impair the performance of the semiconductor.
- 40 Test channels
- Gate V+ and V- SW configurable, Wide Bandgap Compatible
- Gate du/dt configurable
- Stress Frequency up to 300khz
- In-situ Gate Threshold measurement
- Hot/cool Plate for DUTs, -10°C to 200°C
The conventional, static H3TRB essentially tests the behavior of a component under voltage and at high humidity. This can lead to various effects in the device, including the corrosion of materials when static voltage is applied.
In the application, however, high voltage changes occur in addition to the static voltage, especially with the new wide bandgap technologies (SiC/GAN). Due to the constant field changes, these voltage changes significantly accelerate possible corrosion. This can lead to a much earlier failure of the semiconductors in the application than would be expected by the static H3TRB test.
The SET offers as an extension to existing H(3)TRB systems a dynamic stimulus of discrete components or modules in the H3TRB test. This test with dynamic components is especially for applications with high voltage changes a prerequisite to make solid statements about the lifetime.
- 40/80/160/240 Test channels
- Voltage Range SW Configurable up to 1200V
- Frequencies up to 350khz
Research, development & standardization
In order to prove the relevance of dynamic lifetime tests, SET GmbH has carried out test setups in its research & development department, defined parameters and subjected several commercially available SiC components to dynamic HTGS and H3TRB tests using one of the most common measuring methods.
In addition, SET is co-chair of the ECPE working group on Guideline AQG 324, where it is developing European qualification guidelines for power modules in converters in motor vehicles in order to unify and standardize the new test requirements throughout the industry.